Product Name: Positive photoresist for KrF
CAS Number: None
Required Amount: No Info
Other Information: Target Film Thickness: Approx. several hundred nm to 500 nm
Target Pattern: Periodic structures on the order of several hundred nm (intended for interference lithography)
Substrate / Coating Surface: Cr film, Silicon, Glass, Sapphire, etc.
1.Sensitivity and Contrast: Although there are no specific requirements, higher sensitivity to a wavelength of 266 nm is preferred since we plan to use a 266 nm laser.
2.Film Thickness and Profile: We would prefer the film to be as thin as possible, but we plan to determine the best thickness while considering its etching resistance as a mask in subsequent steps. We would like the sidewalls to be as flat as possible.

Developer: We are currently assuming a TMAH solution, but other recommended developers are also acceptable if applicable.